IN2FAB Technology
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45nm Migration


65nm Migration


90nm Migration


130/180nm Migration


0.25um Migration


Customer Success

Porting Success at Every Major Process Node

Since its founding IN2FAB has worked with its customers and achieved porting success at every major process node from 0.35 microns down to and including silicon success at 45 nanometers.  The company has performed in excess of 100 migration tapeout projects for customers covering a wide expanse of end application types.

Port on Demand silicon process migration


Additionally IN2FAB’s customers do not just demand process porting services for CMOS but also for BiCMOS and SiGe.  IN2FAB’s OSIRIS technology and methodology used in conjunction with expert knowledge of IN2FAB’s engineers in high speed design well into the RF band has yielded successful full chip level migrations.

IN2FAB is currently working with some of its advanced customers requiring migration of IP to the 32nm and 28nm process geometries.